Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof

ABSTRACT

A structure useful as a probe for testing electrical interconnections to integrated circuit devices and other electronic components having a substrate with a bond wire elongated electrical conductor extending away from the surface of the substrate. Each of the bond wire elongated electrical conductors has a first end affixed to the surface at an electrical contact location and a multitude of second ends projecting away from the surface. The first end and said second end of bond wire elongated electrical connector has a ball-shaped protuberance positioned thereon and there existsa in the system means for permitting each of the second ends to move about reference positions. 
     The element which contains means for permitting each of the second ends to move about reference positions is a sheet of material having a plurality of through-holes therein through which the second ends project. There is a perforation in each said sheet in the vicinity of said openings.

This application claims priority from Provisional Application U.S. Ser.No. 60/026,088 which was filed on Sep. 13, 1996.

CROSS REFERENCE TO RELATED APPLICATION

The teaching of U.S. application Ser. No. 09/254,768 now U.S. Pat. No.6,528,984, filed on the same day herewith entitled, “INTEGRATEDCOMPLIANT PROBE FOR WAFER LEVEL TEST AND BURNIN” to Brian S. Beaman etal. and the teaching of U.S. application Ser. No. 09/254,798 now U.S.Pat. No. 6,452,406 filed on the same day herewith entitled, “PROBESTRUCTURE HAVING A PLURALITY OF DISCRETE INSULATED PROBE TIPS PROJECTINGFROM A SUPPORT SURFACE, APPARATUS FOR USE THEREOF AND METHODS OFFABRICATION THEREOF” to Brian S. Beaman et al. is incorporated herein byreference.

FIELD OF THE INVENTION

The present invention is directed to structures useful as probes fortesting of electrical interconnections to integrated circuit devices andother electronic components and particularly to testing of integratedcircuit devices with rigid interconnection pads and multi-chip modulepackages with high density interconnection pads.

BACKGROUND OF THE INVENTION

Integrated circuit (IC) devices and other electronic components arenormally tested to verify the electrical function of the device andcertain devices require high temperature burn-in testing to accelerateearly life failures of these devices. Wafer probing is typically done ona single chip site at temperatures ranging from 25C–125C while burn-inis typically done on diced and packaged chips at temperatures rangingfrom 80C to 140C. Wafer probing and IC chip burn-in at elevatedtemperatures of up to 200C has several advantages and is becomingincreasingly important in the semiconductor industry. Simultaneoustesting of multiple chips on a single wafer has obvious advantages forreducing costs and increasing production thruput and is a logical steptowards testing and burn-in of an entire wafer.

The various types of interconnection methods used to test these devicesinclude permanent, semi-permanent, and temporary attachment techniques.The permanent and semi-permanent techniques that are typically usedinclude soldering and wire bonding to provide a connection from the ICdevice to a substrate with fan out wiring or a metal lead frame package.The temporary attachment techniques include rigid and flexible probesthat are used to connect the IC device to a substrate with fan outwiring or directly to the test equipment.

The permanent attachment techniques used for testing integrated circuitdevices such as wire bonding to a leadframe of a plastic leaded chipcarrier are typically used for devices that have low number ofinterconnections and the plastic leaded chip carrier package isrelatively inexpensive. The device is tested through the wire bonds andleads of the plastic leaded chip carrier and plugged into a test socket.If the integrated circuit device is defective, the device and theplastic leaded chip carrier are discarded.

The semi-permanent attachment techniques used for testing integratedcircuit devices such as solder ball attachment to a ceramic or plasticpin grid array package are typically used for devices that have highnumber of interconnections and the pin grid array package is relativelyexpensive. The device is tested through the solder balls and theinternal fan out wiring and pins of the pin grid array package that isplugged into a test socket. If the integrated circuit device isdefective, the device can be removed from the pin grid array package byheating the solder balls to their melting point. The processing cost ofheating and removing the chip is offset by the cost saving of reusingthe pin grid array package.

The most cost effective techniques for testing and burn-in of integratedcircuit devices provide a direct interconnection between the pads on thedevice to a probe sockets that is hard wired to the test equipment.Contemporary probes for testing integrated circuits are expensive tofabricate and are easily damaged. The individual probes are typicallyattached to a ring shaped printed circuit board and support cantileveredmetal wires extending towards the center of the opening in the circuitboard. Each probe wire must be aligned to a contact location on theintegrated circuit device to be tested. The probe wires are generallyfragile and easily deformed or damaged. This type of probe fixture istypically used for testing integrated circuit devices that have contactsalong the perimeter of the device. This type of probe is also muchlarger than the IC device that is being tested and the use of this typeof probe for high temperature testing is limited by the probe structureand material set.

Another technique used for testing IC devices comprises a thin flexcircuit with metal bumps and fan out wiring. The bumps are typicallyformed by photolithographic processes and provide a raised contact forthe probe assembly. The bumps are used to contact the flat or recessedaluminum bond pads on the IC device. An elastomer pad is typically usedbetween the back of the flex circuit and a pressure plate or rigidcircuit board to provide compliance for the probe interface. This typeof probe is limited to flexible film substrate materials that typicallyhave one or two wiring layers. Also, this type of probe does not providea wiping contact interface to ensure a low resistance connection.

The aluminum bond pads on a high density IC device are typicallyrectangular in shape and are recessed slightly below the surface of thepassivation layer. If the wiping action of the high density probe is notcontrolled, the probe contact may move in the wrong direction and shortto an adjacent aluminum bond pad or the probe contact may move off ofthe aluminum bond pad onto the surface of the passivation layer andcause an open connection.

Gold plated contacts are commonly used for testing and burn-in of ICdevices. The high temperature test environment can cause diffusion ofthe base metal of the probe into the gold plating on the surface. Thediffusion process creates a high resistive oxide layer on the surface ofthe probe contact and reduces the probe life.

The position of the probe tips must be controlled to ensure accuratealignment of the probes to the interconnection pads on the IC device.During high temperature burn-in testing, the thermal expansion mismatchbetween the probe structure and the IC device must be small to ensurethat the probe position does not vary significantly over the burn-intemperature range. Thermal expansion mismatch within the probe structurecan result in contact reliability problems.

The challenges of probing a single high density integrated circuitdevice are further multiplied for multi-chip and full wafer testingapplications. Probe fabrication techniques and material selection arecritical to the thermal expansion and contact alignment considerations.A small difference in the thermal expansion of the substrate, wafer, andprobe construction will cause misalignment of the probe tip to the wafercontact pad. Compliance of the probe structure is another criticalfactor. Slight variations in the wafer metalization, warpage of thewafer, and slight variations in the probe height contribute to the totalcompliance requirements for the probe structure.

U.S. Pat. No. 5,177,439, issued Jan. 5, 1993 to Liu et al., is directedto fixtures for testing bare IC chips. The fixture is manufactured froma silicon wafer or other substrate that is compatible with semiconductorprocessing. The substrate is chemically etched to produce a plurality ofprotrusions to match the I/O pattern on the bare IC chip. Theprotrusions are coated with a conductive material and connected todiscrete conductive fanout wiring paths to allow connection to anexternal test system. The probe geometry described in this patent doesnot provide a compliant interface for testing the aluminum bond pads onthe IC device and does not provide a wiping contact interface. Thesubstrate used for fabrication of this probe fixture is limited tosemiconductor wafers which are relatively expensive. The high densityprobe with controlled wipe can be fabricated on a variety of inexpensivesubstrate with the fanout wiring.

IBM Docket #YO993028 describes a high density test probe for integratedcircuit devices. The probe structure described in this docket uses shortmetal wires that are bonded on one end to the fan out wiring on a rigidsubstrate. The wires are encased in a compliant polymer material toallow the probes to compress under pressure against the integratedcircuit device. The wire probes must be sufficiently long and formed atan angle to prevent permanent deformation during compression against theintegrated circuit device. The probe structure described in this patentdoes not provide a means of controlling the direction and length of thewiping action of the contact interface.

IBM Docket #YO995-113 describes a high density test probe for integratedcircuit devices with aluminum bond pads. The probe structure describedin this patent does is subject to contact reliability problems due tothe thermal expansion mismatch between the metal wire conductor and theelastomer material surrounding the wires. At high temperatures, theelastomer material expands sufficiently to cause an open connectionbetween the metal wire probes and the IC bond pads. Also, after repeatedthermal cycles, the ends of the probe wires are sufficiently exposedabove the surface of the elastomer material to be deformed during asubsequent contact cycle with the bond pads on an IC device.

OBJECTS

It is the object of the present invention to provide a probe for testingintegrated circuit devices and other electronic components that use bondpads for the interconnection means.

Another object of the present invention is to provide a probe structurethat is an integral part of the fan out wiring on the test substrate orother printed wiring means to minimize the electrical conductor lengthas well as the contact resistance of the probe interface.

A further object of the present invention is to provide a probe with acompliant interface to compensate for slight variations in the rigidbond pad heights on the IC device and variations in the height of theprobe contacts.

An additional object of the present invention is to provide a raisedprobe tip for contacting recessed surfaces on the IC device.

Yet another object of the present invention is to provide a probe with awiping contact interface where the direction and length of the contactwipe is controllable.

Yet a further object of the present invention is to provide a probeconstruction that has thermal expansion characteristics that are matchedto the IC device to be tested or burned-in at high temperature.

Yet an additional object of the present invention is to provide a probeconstruction that has high durability and reliability for repeatedthermal and mechanical cycling.

Yet another object of the present invention is to provide a probestructure that can be used for single chip or multiple chip wafertesting.

SUMMARY OF THE INVENTION

A broad aspect of the present invention is a structure having asubstrate having a surface; a plurality of elongated electricalconductors extending away from the surface; each of the elongatedelectrical conductors having a first end affixed to said surface and asecond end projecting away from the surface; there being a plurality ofthe second ends; and a means for permitting each of the plurality ofsecond ends to move about reference positions.

According to a more specific aspect of the structure according to thepresent invention is the means for permitting is a sheet of materialhaving a plurality of opening therein through which the second endsproject, therebeing a perforation in the sheet in the vicinity of saidopenings permitting the second ends to move when the structure is usedto electrically probe an electronic device.

According to a more specific aspect of the present invention theperforation are a plurality independent perforations about each of saidthrough-hole.

According to a more specific aspect of the present invention theplurality of interconnected perforations about each of saidthrough-holes.

According to another broad aspect of the present invention thestructures according to the present invention are incorporated into anapparatus to test an electronic device having a means for holding thestructure of 1, means for retractably moving the structure 1 towards andaway from the electronic device so that the second ends contactelectrical contact locations on said electronic device, and means forapplying electrical signals to the elongated electrical conductors.

Another broad aspect of the present invention as a method of providing asubstrate having a surface; forming a plurality of elongated electricalconductors extending away from the surface; each of the elongatedelectrical conductors having a first end fixed to the surface and asecond end projecting away from the surface; there being a plurality ofsaid second ends; and providing a means for permitting each of theplurality of second ends to move about reference positions.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, features, and advantages of the presentinvention will become apparent upon further consideration of thefollowing detailed description of the invention when read in conjunctionwith the drawing figures, in which:

FIG. 1 shows a cross section of an integrated cantilever compliant testprobe attached to a substrate and pressed against the aluminum bond padson an integrated circuit device.

FIG. 2 is essentially the same as FIG. 1 with a modified arrangement ofthe cantilevered flap.

FIGS. 3–6 show the processes used to fabricate the integrated cantilevertest probe on a fan out wiring substrate.

FIG. 7 shows an alternate process used to fabricate the integralcantilever compliant test probe.

FIG. 8 shows a top view of the preferred embodiment of a integratedcantilever compliant test probe.

FIG. 9 shows a top view of the preferred embodiment of the integralcantilever compliant test probe with a modified cantilevered flapconfiguration to allow the probes to be fabricated with a closerspacing.

FIG. 10 shows a cross section of an embodiment of the integratedcantilever compliant test probe attached to a substrate and pressedagainst the aluminum bond pads on an integrated circuit device.

FIG. 11 shows a top view of an embodiment of the integrated cantilevercompliant test probe.

FIG. 12 shows a cross section of an embodiment of the integratedcantilever complaint test probe attached to a substrate and pressedagainst the aluminum bond pads on an integrated circuit device.

FIG. 13 shows a top view of an embodiment of the integrated cantilevercompliant test probe.

FIG. 14 shows a cross section of an embodiment of the integratedcantilever compliant test probe.

FIG. 15 shows a cross section of an integrated cantilever compliant testprobe array for testing multiple IC devices on a single wafer.

FIG. 16 shows a top view of an integrated cantilever compliant testprobe array for testing all of the IC devices on a single wafer.

FIG. 17 shows various shapes to the elongated conductors such as “S”shaped, curved, piece wire linear or combination thereof.

FIG. 18 shows spring means for maintaining sheet (20) resiliently spacedapart from surface (12) of substrate (11). The resilient spacers can besprings or are elastomeric material.

FIG. 19 shows a schematic diagram of a probing apparatus incorporatingthe probe structures of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Preferred Embodiment

FIG. 1 shows a cross section of a test substrate (11) and an integratedcantilever compliant test probe (10) according to the present invention.The test substrate (11) provides a rigid base for attachment of theprobes (10) and fan out wiring from the high density array of probecontacts to a larger grid of pins or other interconnection means to theequipment used to electrically test the integrated circuit device. Thefan out substrate can be made from various materials and constructionsincluding single and multi-layer ceramic with thick or thin film wiring,silicon wafer with thin film wiring, or epoxy glass laminateconstruction with high density copper wiring. The test probes (10) areattached to the first surface (12) of the substrate (11). The probes areused to contact the bond pads (31), typically aluminum bond pads, on theelectronic device, typically an integrated circuit device (30). The bondpads (31) are typically recessed slightly below the surface of thepassivation layer (32) of the electronic device (30). The geometry ofthe integrated cantilever compliant test probe (10) is optimized toprovide a wiping contact interface to penetrate the oxides on thesurface of the bond pads (31) to provide a low resistance connection.

FIG. 2 is essentially the same as FIG. 1 with a modified arrangement ofthe cantilevered flap in the polymer material. The test probe (10) isattached directly to the fan out wiring (13) on the first surface (12)of the substrate (11) to minimize the resistance of the probe interface.The probe geometry is optimized to provide a flexible contact interfacethat controls the direction and length of the wiping action. Theelastomer material (17) preferably surrounding the probes provides ancompliant structure and the cantilevered flaps (23) in the thin polymersheet (18) are used to the controls the direction and length that theprobe tip (16) can wipe against the aluminum bond pads (31) on the ICdevice (30). The probe tip (16) is bonded to the cantilevered flap (23)using a suitable epoxy material (22). As the high density probe (10) ispressed against the IC device (30), the probe wire (15) and thecantilevered flap (23) rotate and the probe tip (16) slides along thesurface of the bond pads (31) of the IC device (30). The probe tip ends(16) move about a reference position that is the position probe tip endshave when the probe tip ends are not pressed against a device undertest.

The length of the sliding or wiping action is restricted by the angleand length of the probe wire (15) and the length of the cantileveredflap (23) in the sheet (20). Sheet (20) is preferably of a polymermaterial.

FIG. 3 shows a process used to fabricate the integrated cantilevercompliant test probe. A thermosonic wire bonder tool is used to attachball bonds (14) to the fan out wiring (13) on the first surface (12) ofthe rigid substrate (11). The wire bonder tool uses a first ceramiccapillary (40) to press the ball shaped end of the bond wire (41)against the first surface (12) of the substrate (11). Compression forceand ultrasonic energy are applied through the first capillary (40) tipand thermal energy is applied from the wire bonder stage through thesubstrate (11) to bond the ball shaped end of the bond wire (41) to thefan out wiring (13) on the first surface (12) of the substrate (11). Thebond wire (41) is positioned at an angle and a shear blade (42) is usedto sever the bond wire (41) to create an angled segment of wire (15)protruding vertically from the ball bond (14). The movement of theceramic capillary (40) is controlled during this process to provide ashort straight section of the wire (43) that is perpendicular to thesurface of the rigid substrate (10).

FIG. 4 shows a laser (50) (preferably an argon ion laser) used to meltthe ends of the short straight sections of the wire (15) to create aball shaped contact (16). The smooth surface of the ball shaped contact(16) is ideal for a wiping interface. The size of the ball shapedcontact (16) on the end of the probe is controlled by the laser powerdensity and the alignment of the focal point from the tip of thestraight wire section (43). The shape at the end of the wire can be anyshaped protuberance such as, for example, a ball with a barbed orpointed end or a shaft pointed end.

FIG. 5 shows a casting dam (60) placed around the array of high densityprobes. The casting dam (60) is used to contain the liquid elastomer(61) until it is cured. A controlled volume of liquid elastomer resin(61) is dispensed into the cavity and allowed to settle out beforecuring. The height of the elastomer material (61) is controlled so thatball shaped end of the probe (16) is slightly above the surface of theelastomer (61). Once the elastomer has cured, the casting dam (60) isremoved and a sheet (20) with cantilever flats (23) and correspondingopenings is placed over the ball shaped ends (16) of the probes as shownin FIG. 6. The sheet (20) is preferably a polymer sheet. An epoxymaterial (22) is applied to the openings in the polymer sheet (20) andcured to bond the probe to the cantilevered flaps (23).

FIG. 6 a depicts an alternate embodiment of FIG. 6. Sheet 20 comprisestwo distinct layers 20 a, a dielectric material, e.g. a polymer such aspolyimide and 20 b which is an electrically conducting layer of metal.This composite sheet 20 a and 20 b in FIG. 6 a has a plurality (notshown) of openings 21 (holes) therethrough of the type depicted. Ball 16is insulated from contacting the metallic sheet 20 b by the dielectricmaterial extending into opening 21.

FIG. 7 shows another process according to the present invention used tofabricate the integral cantilever compliant test probe (100). Thesequence of the fabrication process is changed in order to cast and curethe elastomer resin before the laser ball forming process. After theelastomer (17) is cast and cured, a thin polymer sheet (20) with smallopening (28) corresponding to the probe locations is place over thestraight ends of the probe wires (43). A (preferably thin metal) mask(51) with larger openings (52) corresponding to the probe locations isalso placed over the ends of the probe wires (43). After the (preferablyargon-ion) laser (50) is used to form the ball shaped (16) ends on theprobe wires, the metal mask (51) is removed from the top surface of theprobe structure (100). The mask (51) prevents polymer sheet (20) frombeing exposed to the light of laser (50). The mask (51) can be of anylight blocking material such as metal, ceramic, glass, polymer andcombinations thereof.

FIG. 8 shows a top view of the test probe and the cantilevered flaps(23) in the sheet (20) that is attached to the top of the layer ofelastomer material (17). Openings (21) in the sheet (20) are alignedwith the ball shaped ends (16) of the probes and preferably bonded tothe polymer sheet using an epoxy material. The accuracy of the locationof the ball shaped probe contacts (16) is determined by the accuracy ofthe location of the openings (21) in the polymer sheet (20). The sheet(20) material is preferably selected to match the thermal coefficient ofexpansion (TCE) of the device or other substrate material of the deviceto be tested at elevated temperatures. Flap (23) is formed byperforation (24) which is “U” shaped in FIG. 8. Perforation (24) can beany shape such as triangular, a section of a circle, rectangular,polygonal and combinations thereof.

FIG. 9 shows a top view of an embodiment of the integral cantilevercompliant test probe with a modified cantilevered flap (23)configuration to allow the probes to be fabricated with a closerspacing. Other configurations of the cantilever flap are possible tooptimize the compliance and spacing requirements of the probe array.Flap (23) if formed by perforation (25) which is a perforationinterconnected about a group of openings (22).

FIG. 10 shows another embodiment of the integrated cantilever complianttest probe (80). Instead of bonding the probe wire (15) to thecantilevered flaps (23) in the material (20), the embodiment (80) uses aslotted opening (26) in the cantilevered flaps (23) to control themovement of the probe tip (16). The width of the slot (26) in thecantilevered flap (23) is slightly wider than the diameter of the probewire (15). The narrow width of the slot (26) prevents the ball shapedprobe tip (16) from sinking into the soft elastomer material (17) duringcompression of the probe structure. FIG. 11 shows a top view of theembodiment of FIG. 10. Again perforation (29) is shown “U” shaped butcan be any shape.

FIGS. 12 and 13 show another embodiment of the integrated cantilevercompliant test probe (90). The structure of the embodiment (90) issimilar to the embodiment (80) of the test probe of FIGS. 10 and 11. Thespacing between the probes in one direction is much farther apart thanin the opposite direction. The embodiment (90) uses a singlecantilevered flap (27) to control several probe wires. Perforation (22)partially surrounds a group of openings or slots (26).

FIG. 14 shows another embodiment of the test probe (70). The embodiment(70) of the test probe does not use a cantilevered flap and the end ofthe probe (16) is restricted by the collars (25) surrounding each of theprobe wires (15). The collars (25) are positioned below the ball shapedends of the probe tips (16) to prevent the tips (16) from sinking intothe soft elastomer material (17) during compression. The collars (25)sit in separate openings (24) in the sheet (20) and allow verticalmovement of the probe tips (16) but restrict lateral movement.

FIG. 15 shows a cross section of an integrated cantilever compliant testprobe array (100) for testing multiple IC devices on a single wafer. Theintegrated test probe (100) shown in FIG. 15 includes four distinctprobe arrays used to test individual IC devices on the wafer (130). Theconstruction of each distinct probe array is identical to that shown inFIG. 1, but can be any of the embodiments described herein or in the USpatent applications and patents incorporated herein by reference. Thesubstrate (110) used as the base for building the test probe has anarray of pads (113) on the top surface (112) that matches the pattern ofcontacts (131) on the wafer (130) to be tested. The test probes arebonded to these pads (113) and formed at an angle or other suitableshape as described in the FIGS. 3 to 6 and 17. The angle or shape of thebond wires (115) are preferably all be the same to ensure accuratepositioning of the ball shaped contact (116) on the end of the probe.Likewise, the geometry of the cantilevered sections (118) of the toppolymer sheet (120) must be identical to ensure accurate alignment anduniform wiping against the mating contact pads (131) on the wafer (130).Uniform material properties and height of the elastomer material (117)are necessary to provide optimum compliance and contact normal forceacross the entire surface of the probe array.

FIG. 16 shows a top view of an integrated cantilever compliant testprobe array (100) for testing all of the IC devices on a single wafer(130). The integrated test probe (100) shown in FIG. 16 includes twelvedistinct probe arrays used to test all of the IC devices on the wafer(130). The outline of the wafer (130) and the individual IC devices(132) are shown with broken or dashed lines. The location of each arrayof probes corresponds with the pads on each of the individual IC devices(132) on the wafer (130). The location of the ball shaped ends (118) ofthe test probes is controlled by the location of the opening in thecantilevered sections (118) of the thin polymer sheet (120).

FIG. 17 schematically shares a variety of shape of probe wires useful topractice the present invention, such as “S” showed “C” shaped,continuously curved, piece wire curved, piece wire linear andcombinations thereof.

FIG. 18 schematically shows alternative embodiments of compliant framestructures (17) to support probe tip positioning structure (20) to bemaintaining in position and to move as the probe tip ends (16) move whenthey are moved into engagement with electronic device pads (31).

FIG. 19 schematically shows an apparatus for moving probe structure 10towards and away from electronic device 204 so that probe tips 210engage and disengage electrical contact locations 212 on electronicdevice 204. Probe 10 is mounted on to holder 200 having means 214 forapplying electric power to the probe tips 210. Electronic device 206 isheld on base 206. Holder 200 is physically connected to support 202which is converted to arm 208 which is converted to base 206. Support202 is adapted for up and down movement. Examples of an apparatus toprovide the means for support and up and down movement can be found inU.S. Pat. No. 5,439,161 and U.S. Pat. No. 5,132,613, the teachings ofwhich are incorporated herein by reference.

The teaching of the following patent co-pending applications areincorporated herein by reference:

-   U.S. Pat. No. 5,371,654 entitled, “THREE DIMENSIONAL HIGH    PERFORMANCE INTERCONNECTION PACKAGE”;-   U.S. patent application Ser. No. 08/614,417 entitled, “HIGH DENSITY    CANTILEVERED PROBE FOR ELECTRONIC DEVICES”, now U.S. Pat. No.    5,811,982;-   U.S. patent application Ser. No. 08/641,667 entitled, “HIGH DENSITY    TEST PROBE WITH RIGID SURFACE STRUCTURE” U.S. Pat. No. 5,785,538;-   U.S. patent application Ser. No. 08/527,733 entitled,    “INTERCONNECTOR WITH CONTACT PADS HAVING ENHANCED DURABILITY” U.S.    Pat. No. 5,810,607;-   U.S. patent application Ser. No. 08/752,469 entitled, “FOAMED    ELASTOMERS FOR WAFER PROBING APPLICATIONS AND INTERPOSER    CONNECTORS”;-   U.S. patent application Ser. No. 08/744,903 entitled, “INTEGRAL    RIGID CHIP TEST PROBE” U.S. Pat. No. 5,838,160;-   U.S. patent application Ser. No. 08/756,831 entitled, “HIGH    TEMPERATURE CHIP TEST PROBE” (abandoned);-   U.S. patent application Ser. No. 08/756,830 entitled, “A HIGH    DENSITY INTEGRAL TEST PROBE AND FABRICATION METHOD” abandoned;-   U.S. patent application Ser. No. 08/754,869 entitled, “HIGH DENSITY    INTEGRATED CIRCUIT APPARATUS, TEST PROBE AND METHODS OF USE    THEREOF”U.S. Pat. No. 5,821,763.

It is to be understood that the above described embodiments are simplyillustrative of the principles of the invention. Various othermodifications and changes may be devices by those of skill in the artwhich will embody the principles of the invention and fall within thespirit and scope thereof.

1. A structure comprising: a substrate having a surface; a plurality ofbond wire elongated electrical conductors extending away from saidsurface; each of said bond wire elongated electrical conductors having afirst end affixed to said surface at an electrical contact location anda second end projecting away from said surface; there being a pluralityof said second ends; said first end and said second end of said bondwire elongated electrical connector having a ball-shaped protuberancepositioned thereon; means for permitting each of said plurality of saidsecond ends to move about reference positions; wherein said means forpermitting each of said plurality of second ends to move about referencepositions is a sheet of material having a plurality of through-holestherein through which said second ends project, there being aperforation in each said sheet in the vicinity of said openings.
 2. Thestructure according to claim 1 wherein said perforation comprises aplurality of independent perforations about each of said through hole.3. The structure according to claim 1 wherein said perforation comprisesa plurality of independent perforations about at least a part of saidplurality of through-holes.
 4. The structure according to claim 3wherein the action of mating said plurality of said second endball-shaped protuberances to a plurality of flat or recessed contacts onan IC device causes said plurality of second end ball shapeprotuberances to wipe against said IC contacts.
 5. The structureaccording to claim 1 wherein said perforation is a portion coupled to anadjacent through-hole.
 6. The structure according to claim 1 whereinsaid perforation is adjacent to a plurality of said through-holes. 7.The structure according to claim 1 wherein a plurality of saidperforations form cantilevered flaps about more than one of saidthrough-holes.
 8. The structure according to claim 7, wherein said meansfor permitting each of said plurality of second ends to move aboutreference positions is a sheet of polymer material with a plurality ofcantilever flaps and openings corresponding to said plurality of saidsecond end ball-shaped protuberances.
 9. The structure according toclaim 8, further including an epoxy material used to bond the pluralityof ball shaped protuberances to the corresponding openings in saidcantilever flaps.
 10. The structure according to claim 7, wherein saidmeans for permitting each of said plurality of second ends to move aboutreference positions is a sheet of polymer material with a plurality ofopenings corresponding to a plurality of cylindrical collarsconcentrically located on a plurality of probe wires.
 11. The structureaccording to claim 1 wherein at said second end there is disposed astructure selected from the group consisting of a protuberance and asharp.
 12. A structure according to claim 11 wherein said protuberanceis spherelike.
 13. The structure according to claim 1 wherein at saidsecond end there is disposed a structure selected from the groupconsisting of a protuberance and a sharp.
 14. The structure according toclaim 1 wherein said sheet comprises a sheet of electrically conductivematerial having a plurality of through holes therein, said sheet ofmaterial contains a dielectric material to provide a means forpreventing said elongated electrical conductors from electricallycontacting said sheet of electrically conductive material.
 15. Thestructure according to claim 14 wherein said sheet has a top surface anda bottom surface and said through holes have a sidewall, said dielectricmaterial coats said top surface and said bottom surface and saidsidewall.
 16. The structure according to claim 1 wherein said sheet isspaced apart from said surface by a flexible support.
 17. The structureaccording to claim 16 wherein said flexible support is selected from thegroup consisting of a spring and an elastomeric material.
 18. Thestructure according to claim 16 wherein said sheet and said flexiblesupport form a space containing said plurality of elongated electricalconductors.
 19. The structure according to claim 18 wherein said spaceis filled with a flexible material.
 20. The structure according to claim19 wherein said flexible material is an elastomeric material.
 21. Thestructure according to claim 1 wherein said elongated electricalconductors have a shape selected from the group consisting of linearpiece-wise linear, curved and combinations thereof.
 22. A structureaccording to claim 1 wherein said plurality of elongated electricalconductors are distributed into a plurality of groups.
 23. The structureaccording to claim 22 wherein said plurality of groups are arranged inan array.
 24. The structure according to claim 23 wherein each of saidgroups corresponds to an integrated circuit chip on a substratecontaining a plurality of said integrated circuit chips.
 25. Thestructure according to claim 24 wherein said substrate containing saidplurality of integrated circuit chips is a wafer of said integratedcircuit chips.
 26. The structure according to claim 1 wherein saidstructure is a probe for an electronic device.
 27. The structureaccording to claim 26 wherein said electronic device is selected fromthe group consisting of an integrated circuit and a packaging substrate.28. An apparatus for suing said structure of claim 1 to test anelectronic device comprising: means for holding said structure of claim1; means for retractable moving said structure of claim 1 towards andaway from said electronic device so that said second ends contactelectrical contact locations on said electronic device, and means forapplying electrical signals to said elongated electrical conductors. 29.The structure according to claim 1 wherein said sheet comprises a sheetof electrically conductive material having a plurality of through holestherein, and a sheet of dielectric material having a plurality of secondthrough holes therein, said first through holes are aligned with saidsecond through holes, said first through holes have a smaller diameterthan said second through holes to provide a means for preventing saidelongated electical conductors from electrically contacting said sheetof electrically conductive material.
 30. The structure according toclaim 29 wherein said sheet of electrically conductive material has afirst side and a second side, said sheet of dielectric material isdisposed on either of said first side and said second side of said sheetof electrically conductive material.
 31. The structure according toclaim 30 where there is disposed on said first side and said second sideof said sheet of electrically conductive material, a layer of saiddielectric material.
 32. The structure according to claim 1 wherein saidsheet comprises a sheet of rigid material having a plurality of throughholes therein, said sheet contains a dielectric material to provide ameans for preventing said elongated electrical conductors fromelectrically contacting said sheet of electrically conductive material.33. The structure according to claim 32 wherein said sheet is spacedapart from said surface by a flexible support, said sheet of rigidmaterial is disposed on said flexible support.
 34. The structureaccording to claim 1 wherein said sheet is formed from a materialselected from the group consisting of Invar, Cu/Invar/Cu, molybdenum,polyimides.
 35. The structure according to claim 1 wherein said sheet isformed from a material selected from the group consisting of metal, apolymer, semiconductor and dielectric.
 36. The structure according toclaim 1, further including a layer of elastomer material surroundingsaid ball shaped protuberances positioned at said first end of said bondwire elongated electrical conductors and a substantial portion of saidbond wire elongated electrical conductors.
 37. The structure accordingto claim 1, further including a plurality of cylindrical collarsconcentrically located on the plurality of probe wires and positionedbetween the top surface of said elastomer material and said second endball shape protuberances on the end of said probe wires.
 38. Thestructure according to claim 1, further including a plurality of probearrays corresponding to the location of a plurality of IC devices on awafer.
 39. A method comprising: providing a substrate having a surface;forming a plurality of bond wire elongated electrical conductorsextending away from said surface; each of said bond wire elongatedelectrical conductors having a first end affixed to said surface at anelectrical contact location and a second end projecting away from saidsurface; there being a plurality of said second ends; said first end andsaid second end of said bond wire elongated electrical connector havinga ball-shaped protuberance positioned thereon; providing means forpermitting each of said plurality of said second ends to move aboutreference positions; wherein said means for permitting each of saidplurality of second ends to move about reference positions is a sheet ofmaterial having a plurality of through-holes therein through which saidsecond ends project, there being a perforation in each said sheet in thevicinity of said openings.